中紅外超級LED39系列波長3.8-4.0um開關(guān)時間30ns使用溫度-240度至50度TO-18封裝 LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,90mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.